? semiconductor components industries, llc, 2012 january, 2012 ? rev. 4 1 publication order number: mbrs3100t3/d mbrs3100t3g, NRVBS3100T3G surface mount schottky power rectifier this device employs the schottky barrier principle in a large area metal ? to ? silicon power diode. state ? of ? the ? art geometry features epitaxial construction with oxide passivation and metal overlay contact. ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. features ? small compact surface mountable package with j ? bend leads ? rectangular package for automated handling ? highly stable oxide passivated junction ? excellent ability to withstand reverse avalanche energy transients ? guard ? ring for stress protection ? aec ? q101 qualified and ppap capable ? nrvb prefix for automotive and other applications requiring unique site and control change requirements ? all packages are pb ? free* mechanical characteristics ? case: epoxy, molded ? weight: 217 mg (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 ? c max. for 10 seconds ? polarity: notch in plastic body indicates cathode lead ? esd ratings: ? machine model = c ? human body model = 3b *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information smc case 403 schottky barrier rectifiers 3.0 amperes, 100 volts http://onsemi.com b310 = specific device code a = assembly location y = year ww = work week = pb ? free package marking diagram ayww b310 mbrs3100t3g smc (pb ? free) 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. (note: microdot may be in either location) NRVBS3100T3G smc (pb ? free) 2,500 / tape & reel
mbrs3100t3g, NRVBS3100T3G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 100 v average rectified forward current (at rated v r , t l = 100 ? c) i f(av) 3.0 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 130 a operating junction temperature range (note 1) t j ? 65 to +175 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead r jl 11 ? c/w electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 2) (i f = 3.0 a, t j = 25 ? c) (i f = 6.0 a, t j = 25 ? c) (i f = 3.0 a, t j = 125 ? c) (i f = 6.0 a, t j = 125 ? c) v f 0.79 0.90 0.62 0.70 v maximum instantaneous reverse current (note 2) (rated dc voltage, t j = 25 ? c) (rated dc voltage, t j = 125 ? c) i r 0.05 5.0 ma 2. pulse test: pulse width = 300 s, duty cycle ? 2.0%.
mbrs3100t3g, NRVBS3100T3G http://onsemi.com 3 figure 1. typical forward voltage 0.4 0.3 0.5 0.2 0.9 10 0.1 1 i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) figure 2. maximum forward voltage 0.4 0.6 0.7 0.5 1 10 0.1 1 v f , instantaneous forward voltage (v) i f , instantaneous forward current (a) figure 3. typical reverse current 20 60 04080 1e ? 07 1e ? 06 i r , reverse current (a) v r , reverse voltage (v) figure 4. typical capacitance 125 ? c 25 ? c 1e ? 05 1e ? 04 1e ? 03 125 ? c 75 ? c 25 ? c 20 60 04080 c, capacitance (pf) v r , reverse voltage (v) 1000 25 ? c 1e ? 08 0.3 10 0.7 0.6 0.8 75 ? c 0.8 0.9 75 ? c 100 100 100 125 ? c t j = 25 ? c figure 5. current derating ? lead 100 110 90 180 7 0 3 i f , average forward current (a) t l , lead temperature ( ? c) figure 6. forward power dissipation 134 26 4.5 0 1 i o , average forward current (a) p fo , average power dissipation (w) dc 0 120 140 square wave 5 1 2 6 4 5 0.5 2 1.5 3 2.5 4 3.5 dc square wave rated voltage applied r jl = 11 ? c/w t j = 150 ? c 130 150 160 170
mbrs3100t3g, NRVBS3100T3G http://onsemi.com 4 package dimensions smc case 403 ? 03 issue e dim a min nom max min millimeters 1.90 2.13 2.41 0.075 inches a1 0.05 0.10 0.15 0.002 b 2.92 3.00 3.07 0.115 c 0.15 0.23 0.30 0.006 d 5.59 5.84 6.10 0.220 e 6.60 6.86 7.11 0.260 l 0.76 1.02 1.27 0.030 0.084 0.095 0.004 0.006 0.118 0.121 0.009 0.012 0.230 0.240 0.270 0.280 0.040 0.050 nom max 7.75 7.94 8.13 0.305 0.313 0.320 h e 4.343 0.171 3.810 0.150 2.794 0.110 mm inches scale 4:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* e bd c l1 l a1 a notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. 4. 403-01 thru -02 obsolete, new standard 403-03. h e 0.020 ref 0.51 ref l1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrs3100t3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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